Anterwell Technology Ltd. |
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2SK3569 Silicon Power Transistors N Channel MOS Type Switching
Regulator Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3569
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics | Symbol | Rating | Unit | |
Drain-source voltage | VDSS | 600 | V | |
Drain-gate voltage (RGS = 20 kΩ) | VDGR | 600 | V | |
Gate-source voltage | VGSS | ±30 | V | |
Drain current | DC (Note 1) | ID | 10 | A |
Pulse (t = 1 ms) (Note 1) | IDP | 40 | A | |
Drain power dissipation (Tc = 25°C) | PD | 45 | W | |
Single pulse avalanche energy (Note 2) | EAS | 363 | mJ | |
Avalanche current | IAR | 10 | A | |
Repetitive avalanche energy (Note 3) | EAR | 4.5 | mJ | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | -55~150 | °C |
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics | Symbol | Max | Unit |
Thermal resistance, channel to case | Rth (ch-c) | 2.78 | °C/W |
Thermal resistance, channel to ambient | Rth (ch-a) | 62.5 | °C/W |
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A,
RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle
with caution.
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