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TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

Anterwell Technology Ltd.
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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

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Anterwell Technology Ltd.

TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

Country/Region china
City & Province shenzhen guangdong
Categories Electronics Production Machinery
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Product Details

 

TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

TLP733, TLP734

 

Office Machine

Household Use Equipment

Solid State Relay

Switching Power Supply

 

The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP734 is no−base internal connection for high−EMI environments.

 

  • Collector−emitter voltage: 55 V (min.)
  • Current transfer ratio: 50% (min.)                                   
    • Rank GB: 100% (min.)
  • UL recognized: UL1577, file no. E67349
  • BSI approved: BS EN60065: 1994
    • Certificate no. 7364
    • BS EN60950: 1992
    • Certificate no. 7365
  • SEMKO approved: SS4330784
    • Certificate no. 9325163, 9522142
  • Isolation voltage: 4000 Vrms (min.)
  • Option (D4) type
    • VDE approved: DIN VDE0884 / 06.92,
      • Certificate no. 74286, 91808
    • Maximum operating insulation voltage: 630, 890 VPK
    • Highest permissible over voltage: 6000, 8000 VPK

(Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”

 

 

                                            7.62 mm pich       10.16 mm pich

                                            standard type       TLP×××F type 

Creepage distance             : 7.0 mm (min.)      8.0 mm (min.)

Clearance                           : 7.0 mm (min.)      8.0 mm (min.)

Internal creepage path        : 4.0 mm (min.)      4.0 mm (min.)

Insulation thickness             : 0.5 mm (min.)      0.5 mm (min.) 

 

 

Maximum Ratings (Ta = 25°C)

                                  Characteristic  Symbol   Rating  Unit
 LED Forward current     IF     60  mA
 Forward current derating (Ta ≥ 39°C)  ∆IF / °C    -0.7 mA / °C
 Peak forward current (100 µs pulse, 100 pps)    IFP      1   A
 Reverse voltage    VR      5   V
 Junction temperature     Tj     125  °C
Detector Collectoremitter voltage   VCEO      55   V 
 Collectorbase voltage (TLP733)   VCBO      80   V
 Emittercollector voltage   VECO       7   V
 Emitterbase voltage (TLP733)   VEBO       7   V
 Collector current     IC      50  mA
 Power dissipation    PC     150  mW
 Power dissipation derating (Ta ≥ 25°C)  ∆PC / °C     -1.5 mW / °C
 Junction temperature    Tj     125   °C
  Storage temperature range   Tstg   -55~125   °C
  Operating temperature range   Topr   -40~100   °C
  Lead soldering temperature (10 s)   Tsol      260   °C
  Total package power dissipation    PT      250  mW
  Total package power dissipation derating (Ta ≥ 25°C)  ∆PT / °C     -2.5 mW / °C
  Isolation voltage (AC, 1 min., R.H.≤ 60%)   BVS     4000  Vrms

 

 

Weight: 0.42 g

                Pin Configurations (top view)

 

               

           TLP733

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base

 

           TLP734

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc

 

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