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2SD718 POWER TRANSISTORS (8A,120V,80W) Electronic Component

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

2SD718 POWER TRANSISTORS

High Current Capability High Power Dissipation Complementary to 2SB688

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER	SYMBOL	RATINGS	UNIT
Collector-Base Voltage	VCBO	120	V
Collector-Emitter Voltage	VCEO	120	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	Ic	10	A
Base Current	IB	1	A
Collector Power Dissipation (Tc=25℃)	Pc	80	W
Junction Temperature	Tj	150	℃
Storage Temperature Range	Tstg	-55 ~150	℃

CLASSIFICATION OF hFE

RANK	R	O
RANGE	55-110	80-160

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