Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Features
► Integrated half-bridge package
► Reduces the part count by half
► Facilitates better PCB layout
► Key parameters optimized for Class-D audio amplifier applications
► Low RDS(ON) for improved efficiency
► Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI
► Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier
► Lead-free package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
| Parameter | Max | Units | |
| VDS | Drain-to-Source Voltage | 200 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 9.1 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 5.1 | A |
