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Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

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Anterwell Technology Ltd.

Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

Country/Region china
City & Province shenzhen guangdong
Categories Speakers
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Product Details

 

Silicon PNP Power Transistors 2SA1943

 

DESCRIPTION

·With TO-3PL package

·Complement to type 2SC5200

 

 

APPLICATIONS

·Power amplifier applications

·Recommended for 100W high fidelity

 audio frequency amplifier output stage

 

 

PINNING

    PIN   DESCRIPTION
     1  Emitter
     2

  Collector;connected to

  mounting base

     3  Base

 

 

 

 

CHARACTERISTICS Tj=25℃ unless otherwise specified

 SYMBOL       PARAMETER   CONDITIONS   MIN   TYP.  MAX  UNIT
 V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0  -230     V
 VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A    -3.0   V
 VBE Base-emitter voltage IC=-7A ; VCE=-5V    -1.5   V
 ICBO Collector cut-off current VCB=-230V; IE=0    -5  μA
 IEBO Emitter cut-off current VEB=-5V; IC=0    -5  μA
 hFE-1 DC current gain IC=-1A ; VCE=-5V   55   160 
 hFE-2 DC current gain IC=-7A ; VCE=-5V   35   
 fT Transition frequency IC=-1A ; VCE=-5V    30   MHz
 COB Collector output capacitance f=1MHz;VCB=-10V   360   pF

 

‹ hFE-1 classifications

      R         O
   55-110      80-160

 

PACKAGE OUTLINE

 

 

 

 

 

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