Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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HEXFET Power MOSFET T
♦Ultra Low
On-Resistance 
♦P-Channel MOSFET
♦SOT-23 Footprint
♦Low Profile (<1.1mm)
♦Available in Tape and Reel
♦Fast Switching
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in battery and load
management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | -20 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ -4.5V | -3.7 | A |
| ID @ TA= 70°C | Continuous Drain Current, VGS @ -4.5V | -2.2 | |
| IDM | Pulsed Drain Current | -22 | |
| PD @TA = 25°C | Power Dissipation | 1.3 | W |
| PD @TA = 70°C | Power Dissipation | 0.8 | |
| Linear Derating Factor | 0.01 | W/°C | |
| EAS | Single Pulse Avalanche Energy | 11 | mJ |
| VGS | Gate-to-Source Voltage | ± 12 | V |
