Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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FDV305N
20V N-Channel PowerTrench MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
Applications
• Load switch 
• Battery protection
• Power management
Features
• 0.9 A, 20 V
RDS(ON) = 220 mΩ @ VGS = 4.5 V
RDS(ON) = 300 mΩ @ VGS = 2.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
Absolute Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | ± 12 | V |
| ID | Drain Current – Continuous 0.9 A – Pulsed | 0.9 2 | A |
| PD | Maximum Power Dissipation | 0.35 | W |
