Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Digital Attenuator, 30 dB, 4-Bit DC-2.0 GHz AT-220
Features Functional Schematic
• Attenuation 2-dB Steps to 30 dB 
• High Accuracy
• Low Intermodulation Product: +50 dBm IP3
• Low DC Power Consumption: 50 µW
• SOIC-16 Plastic Package
• Tape and Reel Packaging Available
• Temperature Stability +/-0.15 dB: -40°C to +85°C
Description
M/A-COM’s AT-220 is a 4-bit, 2-dB step GaAs MMIC digital attenuator in a low cost SOIC 16-lead surface mount plastic package. The AT-220 is ideally suited for use where high accuracy, fast switching, very low power consumption and low intermodulation products are required. Typical applications include radio and cellular equipment, wireless LANs, GPS equipment and other Gain/Level Control circuits.
The AT-220 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features
full chip passivation for increased performance and reliability.
| Pin No. | Function | Pin No. | Function |
| 1 | VC1 | 9 | RF2 |
| 2 | VC1 | 10 | GND |
| 3 | VC2 | 11 | GND |
| 4 | VC2 | 12 | GND |
| 5 | VC3 | 13 | GND |
| 6 | VC3 | 14 | GND |
| 7 | VC4 | 15 | GND |
| 8 | VC4 | 16 | RF1 |
| Parameter | Absolute Maximum |
Input Power: 50 MHz 500-2000 MHz |
+27 dBm +34 dBm |
| Control Voltage | -8.5 V ≤ VC ≤ 5V |
| Operating Temperature | -40°C to +85°C |
| Storage Temperature | -65°C to +150°C |
1. Exceeding any one or combination of these limits may cause permanent
damage to this device.
| Parameter | Test Conditions | Frequency | Units | Min | Typ | Max |
| Insertion Loss (reference state) | DC - 0.5 GHz DC -1.0 GHz DC -2.0 GHz |
dB dB dB | -- -- -- | 1.5 1.6 1.8 | 1.7 1.8 2.1 | |
| Attenuation Accuracy 2 | DC -1.0 GHz DC -2.0 GHz | ± (0.15 dB + 3% of Atten Setting in dB) dB ± (0.30 dB + 4% of Atten Setting in dB) dB | ||||
| VSWR | Ratio | -- | 1.2:1 | -- | ||
| Trise, Tfall | 10% to 90% RF, 90% to 10% RF | -- | nS | -- | 12 | -- |
| Ton, Toff | 50% Control to 90% RF, 50% Control to 10% RF | -- | nS | -- | 18 | -- |
| Transients | In-Band | -- | mV | -- | 25 | -- |
| 1 dB Compression | Input Power Input Power | 0.05 GHz 0.5 - 2.0 GHz | dBm dBm | -- -- | 20 28 | -- -- |
| IP2 | Measured Relative to Input Power (For two-tone input power up to +5 dBm) | 0.05 GHz 0.5 - 2.0 GHz | dBm dBm | -- -- | 45 68 | -- -- |
| IP3 | Measured Relative to Input Power (For two-tone input power up to +5 dBm) | 0.05 GHz 0.5 - 2.0 GHz | dBm dBm | -- -- | 40 50 | -- -- |
| Control Current | |VC| = 5 V | µA | -- | 100 | ||
2. Attenuation accuracy specifications apply with negative bias control and low inductance grounding.
SOIC-16
Typical Performance Curves
