Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board
30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (45nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability
Absolute Maximum Ratings TA=25o C unless otherwise noted
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current – Continuous (Note 1a) – Pulsed | 14.5 | A |
| 50 | |||
| PD | Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) | 2.5 | W |
| 1.5 | |||
| 1 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | –55 to +150 | °C |
Thermal Characteristics
| RθJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | W/°C |
| RθJC | Thermal Resistance, Junction-to-Case (Note 1) | 25 |
Package Marking and Ordering Information
| Device Marking | Device | Reel Size | Tape width | Quantity |
| FDS6676AS | FDS6676AS | 13“ | 12MM | 2500 units |
| FDS6676AS | FDS6676AS_NL | 13” | 12MM | 2500 units |
