Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85

Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85

BAS85 Schottky barrier diode

FEATURES

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed small SMD package.

DESCRIPTION

Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.

APPLICATIONS

• Ultra high-speed switching  

• Voltage clamping

• Protection circuits

• Blocking diodes.

SYMBOL PARAMETER CONDITIONS

MIN. MAX. UNIT VR continuous reverse voltage − 30 V

IF continuous forward current − 200 mA

IF(AV) average forward current VRWM = 25 V; a = 1.57; δ = 0.5;

note 1; Fig.2 − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA I

FSM non-repetitive peak forward current tp = 10 ms − 5 A

Tstg storage temperature −65 +150 °C

Tj junction temperature − 125 °C

Tamb operating ambient temperature −65 +125 °C