Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier
Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V
Power MOSFET IXFQ60N50P3 I D25 = 60A
IXFH60N50P3 RDS(on) ≤ 100mΩ
N-Channel Enhancement Mode 
Avalanche Rated
Fast Intrinsic Rectifier
| Symbol | Test Conditions | Maximum Ratings |
VDSS VDGR | TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ | 500 V 500 V |
VGSS VGSM | Continuous Transient | ± 30 V ± 40 V |
I D25 I DM | TC = 25°C TC = 25°C, Pulse Width Limited by TJM | 60 A 150 A |
I A EAS | TC = 25°C TC = 25°C | 30 A 1 J |
| dv/dt | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 35 V/ns |
| PD | TC = 25°C | 1040 W |
TJ TJM Tstg | -55 ... +150 °C 150 °C -55 ... +150 °C | |
TL Tsold | 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds | 300 °C 260 °C |
| Md | Mounting Torque (TO-247 & TO-3P) | 1.13 / 10 Nm/lb.in. |
| Weight | TO-268 TO-3P TO-247 | 4.0 g 5.5 g 6.0 g |
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters z Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature
Fig. 5. RDS(on) Normalized to ID = 30A Value vs. 6. Maximum Drain Current vs. Case Drain CurrentFig. Temperature
Fig. 7. Input Admittance Fig. 8. Transconductance
