Active Member
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[China]
Address: 7F, Building F, Longjing Science park, 335 Bulong Road, Ma Antang Community, Bantian Street, Longgang District, Shenzhen, China
Contact name:sales
Yingxinyuan Int'l(Group) Ltd. |
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Amplifier IC Chips Infineon Technologies IRF5210PBF
| ECAD Module | PCB Symbol, Footprint & 3D Model |
| Country of Origin | China, Philippines |
| Halogen Free | Compliant |
| Estimated EOL Date | 2024 |
| Is this a common-used part? | Yes |
| Popularity | High |
| Fake Threat In the Open Market | 42 pct. |
| Supply and Demand Status | Sufficient |
| Alternative Parts (Cross-Reference) | IXTT50P10; |
| ECCN | EAR99 |
| Introduction Date | 30-Jan-04 |
| Family Name | IRF5210 |
| Case / Package | TO-220AB |
| Mounting | Through Hole |
| Temperature Range - Operating | -55°C to 175°C (TJ) |
| Power Dissipation (Max) | 200W (Tc) |
| Maximum Gate-Source Voltage | ±20V |
| Maximum Rds On at Id,Vgs | 60 mOhm @ 24A, 10V |
| Dimension | TO-220-3 |
| Gate-Source Threshold Voltage | 4V @ 250μA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Continuous Drain Current at 25°C | 40A (Tc) |
| Technology | MOSFET |
| Polarity | P-Channel |
| Status | Active |
| Packaging | Tube/Rail |
| Manufacturer | Infineon Technologies |
| Categories | Discrete Semiconductor Products |
| Max Input Capacitance | 2700pF @ 25V |
| Max Gate Charge | 180nC @ 10V |
| Drain-Source Breakdown Voltage | 100V |
