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Surface Mount MLV MLCV SMD 1608 Metric Multilayer Chip Metal Oxide Varistor MVR0603-8R0G 8V 30A For Surge Protection

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Aolittel Technology Co.,Ltd

Surface Mount MLV MLCV SMD 1608 Metric Multilayer Chip Metal Oxide Varistor MVR0603-8R0G 8V 30A For Surge Protection

Country/Region china
City & Province dongguan guangdong
Categories Fuse Components
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Product Details

 

Surface Mount MLV MLCV SMD 1608 Metric Multilayer Chip Metal Oxide Varistor MVR0603-8R0G 8V 30A For Surge Protection

 

 

DESCRIPTION


The MVR series is metal oxide based chip varistor for transient voltage suppression. They have non-linear voltage-current behavior, similar to zener diode. Multilayer structured varistor, however, shows superiority in electrical reliability than zener diode, since each grain exhibits small p-n junction. In addition, MVR series shows better electrical properties such as high clamping voltage and low leakage current.

 

 

 

APPLICATIONS


* Protection from transient voltage noise in all kinds of IC
* Protection from ESD, EFT and surge in power I/O port
* Replacement of zener diode

 

 

FEATURES


* Chip varistor provides high reliability on surface mounting
* Wide range of working voltage (VW = 5.6V˜30V)
* Good clamping ratio and low leakage current
* Electroplating of Ni and solder gives higher solderability
* Wide operating temperature (-55˜125°C )
* Various capacitance is available

 

 

Dimension(mm)

 

Model1005(0402)1608(0603)2012(0805)3216(1206)3225(1210)4532(1812)5750(2220)8050(3220)

Length

(L)

1.00±0.151.60±0.202.00±0.203.20±0.203.20±0.204.50±0.305.70±0.308.0±0.30
Width(W)0.50±0.150.80±0.201.20±0.201.60±0.202.50±0.203.20±0.205.00±0.305.00±0.30
High(H)0.70max0.90max1.30max1.60max2.50max3.20max4.50max4.50max

 

 

SMD Metal Oxide Varistor Series Electrical Parameters

 

Part
Number
Working
Breakdown
Clamping
Peak Current
Voltage
Voltage
Voltage
AC
DC
@ 1mA DC
8/20uS
8/20uS(A) Ip(MAX)
VAC
VDC
VB
VC
0603
0805
1206
1210
1812
2220
3220
1.4
2
3
2.4~3.6
9
20
 
 
 
 
 
 
2.4
3.3
5
4.0~6.0
12
20
60
80
 
 
 
 
4
5.5
8
7.0~10.5
14
20
60
80
250
400
 
 
7
9
12
10~14
24
20
60
80
250
400
800
 
11
14
18
15.5~21
30
20
80
100
250
400
800
500
14
18
24
22-27
38
20
80
100
250
500
1200
500
17
22
27
24~30
42
20
80
100
250
500
1200
500
20
26
33
29~36
54
20
80
100
250
500
1200
500
24
30
39
35~42
65
20
80
100
250
500
1200
500
28
36
47
42~52
77
20
80
100
250
500
1200
500
35
45
56
50~62
90
 
80
100
250
500
1200
500
40
56
68
60~75
110
 
 
100
250
500
1200
500
50
65
82
73~91
135
 
 
80
200
300
800
500
60
85
100
90~110
165
 
 
80
200
300
800
500
75
100
120
108~132
200
 
 
 
200
300
500
500
95
125
150
135~165
250
 
 
 
 
300
500
500
115
150
180
162~198
300
 
 
 
 
 
500
500
130
170
205
184~226
340
 
 
 
 
 
 
500
140
180
220
198~242
360
 
 
 
 
 
 
500
150
200
240
216~264
395
 
 
 
 
 
 
500
175
225
270
243~297
455
 
 
 
 
 
 
500
230
300
360
324~396
595
 
 
 
 
 
 
500
250
320
390
351~429
650
 
 
 
 
 
 
500
275
350
430
387~473
710
 
 
 
 
 
 
400
300
385
470
423~517
775
 
 
 
 
 
 
400

 

 

Varistor vs. TVS Diode

 

ESD current has the rise time of sub-nanosecond, duration of tens of nanosecond, and its amplitude reaches over 10KV. So, the protecting device from ESD also needs fast response time.
TVS diode has a similar performance with that of LATTRON's varistor, in terms of response time and handling capacity. Which, however, shows inferiority in surge current, leakage current,
operating directionality, polarity, and miniaturization as shown in the table. 

 

 LATTRON® VARISTORTVS DIODE
Response time< 1ns> 1ns
ESD handling capability> Contact 8kV, 10 cycle
Leakage currentLow in all spec.High in case of
low voltage spec.
Surge current Low especially in
handling capability
High in all spec.high voltage spec.
Operating temp.Characteristics are 
deteriorated over 80°C

Characteristics are

deteriorated from 25°C

SizeMin. 0603 mmMin. 1608 mm

 

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