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Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
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FESB8DTHE3 - 81 Diode 200 V 8A Surface Mount TO-263AB (D²PAK)
Specifications of FESB8DTHE3 - 81
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Diodes | |
| Rectifiers | |
| Single Diodes | |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D²PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | FESB8 |
Features of FESB8DTHE3 - 81
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for
TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications of FESB8DTHE3 - 81
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, dc-to-dc converters, and
other power switching application.
Environmental & Export Classifications of FESB8DTHE3 - 81
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
