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M93C66-WMN6TP EEPROM Memory IC Integrated Circuit Chip 4Kbit Microwire 2 MHz 8-SOIC

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M93C66-WMN6TP EEPROM Memory IC Integrated Circuit Chip 4Kbit Microwire 2 MHz 8-SOIC

Country/Region china
City & Province shenzhen guangdong
Categories Electronics Agents
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Product Details

M93C66-WMN6TP EEPROM Memory IC Integrated Circuit Chip 4Kbit Microwire 2 MHz 8-SOIC
 
Specifications of M93C66-WMN6TP

 

TYPEDESCRIPTION
CategoryIntegrated Circuits (ICs)
 Memory
 Memory
MfrSTMicroelectronics
Series-
PackageTape & Reel (TR)
 Cut Tape (CT)
Memory TypeNon-Volatile
Memory FormatEEPROM
TechnologyEEPROM
Memory Size4Kbit
Memory Organization512 x 8, 256 x 16
Memory InterfaceMicrowire
Clock Frequency2 MHz
Write Cycle Time - Word, Page5ms
Voltage - Supply2.5V ~ 5.5V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Base Product NumberM93C66

 

 

Features of M93C66-WMN6TP


• Industry standard MICROWIRE™ bus
• Single supply voltage:
– 2.5 V to 5.5 V for M93Cx6-W
– 1.8 V to 5.5 V for M93Cx6-R
• Dual organization: by word (x16) or byte (x8)
• Programming instructions that work on: byte, word or entire memory
• Self-timed programming cycle with auto-erase: 5 ms
• READY/BUSY signal during programming
• 2 MHz clock rate
• Sequential read operation
• Enhanced ESD/latch-up behavior
• More than 4 million write cycles
• More than 200-year data retention

 

 

Applications of M93C66-WMN6TP


The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b).

 


Environmental & Export Classifications of M93C66-WMN6TP
 

ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8542.32.0051

 

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