SZ ADE Electronics Co., Ltd |
Verified Suppliers
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M93C66-WMN6TP EEPROM Memory IC Integrated Circuit Chip 4Kbit
Microwire 2 MHz 8-SOIC
Specifications of M93C66-WMN6TP
TYPE | DESCRIPTION |
Category | Integrated Circuits (ICs) |
Memory | |
Memory | |
Mfr | STMicroelectronics |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM |
Memory Size | 4Kbit |
Memory Organization | 512 x 8, 256 x 16 |
Memory Interface | Microwire |
Clock Frequency | 2 MHz |
Write Cycle Time - Word, Page | 5ms |
Voltage - Supply | 2.5V ~ 5.5V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Base Product Number | M93C66 |
Features of M93C66-WMN6TP
• Industry standard MICROWIRE™ bus
• Single supply voltage:
– 2.5 V to 5.5 V for M93Cx6-W
– 1.8 V to 5.5 V for M93Cx6-R
• Dual organization: by word (x16) or byte (x8)
• Programming instructions that work on: byte, word or entire
memory
• Self-timed programming cycle with auto-erase: 5 ms
• READY/BUSY signal during programming
• 2 MHz clock rate
• Sequential read operation
• Enhanced ESD/latch-up behavior
• More than 4 million write cycles
• More than 200-year data retention
Applications of M93C66-WMN6TP
The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8
Kbit) and M93C86 (16 Kbit) are electrically erasable programmable
memory (EEPROM) devices accessed through the MICROWIRE™ bus
protocol. The memory array can be configured either in bytes (x8b)
or in words (x16b).
Environmental & Export Classifications of M93C66-WMN6TP
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8542.32.0051 |