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[China]
Trade Verify
Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
SZ ADE Electronics Co., Ltd |
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Verified Suppliers
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2SA2013-TD-E Bipolar Transistor PNP 50 V 4 A 400MHz 3.5 W Surface Mount PCP
Specifications of 2SA2013-TD-E
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 0.166666667 |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Power - Max | 3.5 W |
| Frequency - Transition | 400MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | PCP |
| Base Pro2SA2013-TD-E Bipolar (BJT) Transistor PNP 50 V 4 A 400MHz 3.5 W Surface Mount PCPduct Number | 2SA2013 |
Application of 2SA2013-TD-E
• Relay drivers, lamp drivers, motor drivers, flash
Features of 2SA2013-TD-E
• Adoption of FBET and MBIT processes
• Large current capacity
• Low collector-to-emitter saturation voltage
• High-speed switching
• Ultrasmall package facilitales miniaturization in end products
• High allowable power dissipation
Environmental & Export Classifications of 2SA2013-TD-E
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
