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[China]
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Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
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Verified Suppliers
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NVTFS4C13NWFTAG N-Channel 30 V 14A (Ta) 3W (Ta), 26W (Tc) Surface
Mount 8-WDFN
Specifications of NVTFS4C13NWFTAG
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 26W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
| Base Product Number | NVTFS4 |
Features of NVTFS4C13NWFTAG
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C13NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Environmental & Export Classifications of NVTFS4C13NWFTAG
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
