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IRFR3710ZTRPBF Electronic Components N-Channel 100 V 42A (Tc) 140W
(Tc) D-Pak
MOSFET N-CH 100V 42A DPAK
Specifications of IRFR3710ZTRPBF
TYPE | DESCRIPTION |
Category | Single FETs, MOSFETs |
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2930 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number | IRFR3710 |
Features of IRFR3710ZTRPBF
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Multiple Package Options
* Lead-Free
Applications of IRFR3710ZTRPBF
This HEXFET® Power MOSFET utilizes the latest processing techniques
to achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in a wide variety of applications.
Environmental & Export Classifications of IRFR3710ZTRPBF
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |