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IRFR3710ZTRPBF Electronic Components N-Channel MOSFET 100 V 42A (Tc) 140W (Tc) D-Pak

SZ ADE Electronics Co., Ltd

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IRFR3710ZTRPBF Electronic Components N-Channel MOSFET 100 V 42A (Tc) 140W (Tc) D-Pak

Country/Region china
City & Province shenzhen guangdong
Categories Switching Power Supply
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Product Details

IRFR3710ZTRPBF Electronic Components N-Channel 100 V 42A (Tc) 140W (Tc) D-Pak
 
MOSFET N-CH 100V 42A DPAK
 
Specifications of IRFR3710ZTRPBF

 

TYPEDESCRIPTION
CategorySingle FETs, MOSFETs
MfrInfineon Technologies
SeriesHEXFET®
PackageTape & Reel (TR)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2930 pF @ 25 V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Base Product NumberIRFR3710

 

Features of IRFR3710ZTRPBF


* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Multiple Package Options
* Lead-Free

 

 

Applications of IRFR3710ZTRPBF


This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

 


Environmental & Export Classifications of IRFR3710ZTRPBF

 

ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095

 

 

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