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Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
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IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA
540mW
MOSFET P-CH 30V 760MA SOT23
Specifications of IRLML5103TRPBF
| TYPE | DESCRIPTION |
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 760mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | IRLML5103 |
Features of IRLML5103TRPBF
* Generation V Technology
* UltraLow On-Resistance
* P-ChannelMOSFET
* SOT-23 Footprint
* Low Profile (<1.1mm)
* Available in Tape and Reel
* Fast Switching
* Lead-Free
* RoHS Compliant, Halogen-Free
Descriptions of IRLML5103TRPBF
FifthGeneration HEXFETs from International Rectifierutilize
advanced processing techniques to achieveextremely low
on-resistance per silicon area. This benefit.combined with the fast
switching speed and ruggedizeddevice design that HEXFET Power
MOSFETs are wellknown for, provides the designer with an extremely
efficientand reliable device for use in a wide variety of
applications.
Environmental & Export Classifications of IRLML5103TRPBF
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
