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NCV5183DR2G Tvs Diode Smd Ic Gate Drvr Half-Bridge 8soic NCV5183DR2GOSCT-ND

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NCV5183DR2G Tvs Diode Smd Ic Gate Drvr Half-Bridge 8soic NCV5183DR2GOSCT-ND

Country/Region china
City & Province shenzhen guangdong
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Product Details

NCV5183DR2G Tvs Diode Smd Ic Gate Drvr Half-Bridge 8soic NCV5183DR2GOSCT-ND

 

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

 

Specifications of NCV5183DR2G

 

TYPEDESCRIPTION
CategoryIntegrated Circuits (ICs)
Power Management (PMIC)
Gate Drivers
Mfronsemi
SeriesAutomotive, AEC-Q100
PackageTape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Product StatusActive
Digi-Key ProgrammableNot Verified
Driven ConfigurationHalf-Bridge
Channel TypeIndependent
Number of Drivers2
Gate TypeN-Channel MOSFET
Voltage - Supply9V ~ 18V
Logic Voltage - VIL, VIH1.2V, 2.5V
Current - Peak Output (Source, Sink)4.3A, 4.3A
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Rise / Fall Time (Typ)12ns, 12ns
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Base Product NumberNCV5183

 

FEATURES of NCV5183DR2G

 
 Automotive Qualified to AEC Q100
Voltage Range: up to 600 V dV/dt Immunity 
Gate Drive Supply Range from 9 V to 18 V
Output Source / Sink Current Capability 4.3 A / 4.3 A
3.3 V and 5 V Input Logic Compatible
Extended Allowable Negative Bridge Pin Voltage Swing to –10 V
Matched Propagation Delays between Both Channels
Propagation Delay 120 ns typically
Under VCC LockOut (UVLO) for Both Channels
Pin to Pin Compatible with Industry Standards
These are Pb−free Devices
 

Applications of NCV5183DR2G

 
Power Supplies for Telecom and Datacom
Half−Bridge and Full−Bridge Converters
• Push−Pull Converters
High Voltage Synchronous−Buck Converters
 
 

Environmental & Export Classifications of NCV5183DR2G

 

ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8542.39.0001
 

 

 

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